Advanced Materials

Correction: Flexible Fullerene Field-Effect Transistors Fabricated Through Solution Processing

Authors

Errata

This article corrects:

  1. Flexible Fullerene Field-Effect Transistors Fabricated Through Solution Processing Volume 21, Issue 47, 4845–4849, Article first published online: 10 August 2009

The first entry in the affiliation section was incomplete in the original article. The correct representation of the affiliation is as follows:

Dr. C.-W. Chu, C.-F. Sung, F.-C. Chen

Department of Photonics

National Chao Tung University

Hsinchu 30013 (Taiwan)

E-mail: gchu@gate.sinica.edu.tw

Ancillary