Electrical Characterization of Unipolar Organic Resistive Memory Devices Scaled Down by a Direct Metal-Transfer Method

Authors

  • Jin Ju Kim,

    1. School of Materials Science and Engineering, Gwangju Institute of Science and Technology, 1 Oryong-Dong, Buk-Gu, Gwangju 500-712, Korea
    Current affiliation:
    1. These two authors contributed equally to this work.
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  • Byungjin Cho,

    1. School of Materials Science and Engineering, Gwangju Institute of Science and Technology, 1 Oryong-Dong, Buk-Gu, Gwangju 500-712, Korea
    Current affiliation:
    1. These two authors contributed equally to this work.
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  • Ki Seok Kim,

    1. School of Materials Science and Engineering, Gwangju Institute of Science and Technology, 1 Oryong-Dong, Buk-Gu, Gwangju 500-712, Korea
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  • Takhee Lee,

    Corresponding author
    1. School of Materials Science and Engineering, Gwangju Institute of Science and Technology, 1 Oryong-Dong, Buk-Gu, Gwangju 500-712, Korea
    • School of Materials Science and Engineering, Gwangju Institute of Science and Technology, 1 Oryong-Dong, Buk-Gu, Gwangju 500-712, Korea.
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  • Gun Young Jung

    Corresponding author
    1. School of Materials Science and Engineering, Gwangju Institute of Science and Technology, 1 Oryong-Dong, Buk-Gu, Gwangju 500-712, Korea
    • School of Materials Science and Engineering, Gwangju Institute of Science and Technology, 1 Oryong-Dong, Buk-Gu, Gwangju 500-712, Korea.
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Abstract

original image

Unipolar organic resistive memory devices with cell sizes of 2 μm and 100 nm are demonstrated by a nonaqueous direct metal-transfer (DMT) method, presenting high ON/OFF ratios and reliable memory performance. The developed DMT method can be extensively utilized to fabricate crossbar array devices with nanometer scale junctions, demonstrating the feasibility of highly integrated organic memory device applications.

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