Communication

Electrical Characterization of Unipolar Organic Resistive Memory Devices Scaled Down by a Direct Metal-Transfer Method

  1. Jin Ju Kim†,
  2. Byungjin Cho†,
  3. Ki Seok Kim,
  4. Takhee Lee*,
  5. Gun Young Jung*

Article first published online: 24 MAR 2011

DOI: 10.1002/adma.201100081

Issue

Advanced Materials

Advanced Materials

Volume 23, Issue 18, pages 2104–2107, May 10, 2011

Additional Information

How to Cite

Kim, J. J., Cho, B., Kim, K. S., Lee, T. and Jung, G. Y. (2011), Electrical Characterization of Unipolar Organic Resistive Memory Devices Scaled Down by a Direct Metal-Transfer Method. Adv. Mater., 23: 2104–2107. doi: 10.1002/adma.201100081

Author Information

  1. School of Materials Science and Engineering, Gwangju Institute of Science and Technology, 1 Oryong-Dong, Buk-Gu, Gwangju 500-712, Korea

  1. †

    These two authors contributed equally to this work.

*School of Materials Science and Engineering, Gwangju Institute of Science and Technology, 1 Oryong-Dong, Buk-Gu, Gwangju 500-712, Korea.

Publication History

  1. Issue published online: 2 MAY 2011
  2. Article first published online: 24 MAR 2011
  3. Manuscript Revised: 7 MAR 2011
  4. Manuscript Received: 10 JAN 2011

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Keywords:

  • organic electronics;
  • metal-transfer patterning;
  • nonvolatile memory;
  • unipolar memory
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Unipolar organic resistive memory devices with cell sizes of 2 μm and 100 nm are demonstrated by a nonaqueous direct metal-transfer (DMT) method, presenting high ON/OFF ratios and reliable memory performance. The developed DMT method can be extensively utilized to fabricate crossbar array devices with nanometer scale junctions, demonstrating the feasibility of highly integrated organic memory device applications.

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