Get access

High-Performance Graphene Devices on SiO2/Si Substrate Modified by Highly Ordered Self-Assembled Monolayers

Authors

  • Xiaomu Wang,

    1. Department of Electronic Engineering and Materials Science and Technology Research Center, The Chinese University of Hong Kong, Hong Kong SAR, P. R. China
    Search for more papers by this author
  • Jian-Bin Xu,

    Corresponding author
    1. Department of Electronic Engineering and Materials Science and Technology Research Center, The Chinese University of Hong Kong, Hong Kong SAR, P. R. China
    2. Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, Jiangsu 210093, P. R. China
    • Department of Electronic Engineering and Materials Science and Technology Research Center, The Chinese University of Hong Kong, Hong Kong SAR, P. R. China
    Search for more papers by this author
  • Chengliang Wang,

    1. Department of Electronic Engineering and Materials Science and Technology Research Center, The Chinese University of Hong Kong, Hong Kong SAR, P. R. China
    Search for more papers by this author
  • Jun Du,

    1. Department of Electronic Engineering and Materials Science and Technology Research Center, The Chinese University of Hong Kong, Hong Kong SAR, P. R. China
    Search for more papers by this author
  • Weiguang Xie

    Corresponding author
    1. Department of Electronic Engineering and Materials Science and Technology Research Center, The Chinese University of Hong Kong, Hong Kong SAR, P. R. China
    2. Department of Physics, Jinan University, Guangzhou, Guangdong 510632, P. R. China
    • Department of Physics, Jinan University, Guangzhou, Guangdong 510632, P. R. China.
    Search for more papers by this author

Abstract

original image

A SiO2/Si substrate modified by an octadecyltrimethoxysilane (OTMS) self-assembled monolayer is used to obtain high-quality graphene devices with low intrinsic doping level. The carrier mobility can reach 47 000 cm2 V−1 s−1. The findings will pave the way for approaching the intrinsic properties of supported graphene, elucidating the scattering origins, and gaining a better understanding of the mechanism of carrier transport in graphene.

Ancillary