In Situ Observation of Voltage-Induced Multilevel Resistive Switching in Solid Electrolyte Memory



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Solid electrolyte memories utilizing voltage-induced resistance change display the capability of multilevel switching, but understanding of the microscopic switching mechanism has been left incomplete. Here, in situ TEM observation of voltage-induced changes in the microstructure of a solid electrolyte memory is reported, revealing that the multilevel switching originates from the growth of multiple conducting filaments with nanometer-sized diameter and spacing.