Photoinduced Memory with Hybrid Integration of an Organic Fullerene Derivative and an Inorganic Nanogap-Embedded Field-Effect Transistor for Low-Voltage Operation



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A photoinduced hybrid memory operating with a low voltage is demonstrated by embedding the fullerene derivative, [6,6]-phenyl-C61-butyric acid methyl ester (PCBM), into a conventional silicon-channel FET with a nanogap, upon application of both electrical and optical pulses. The nanogap geometry allows high mobility, which is the same as that of conventional silicon and organic–inorganic hybrid integration without thermal instability.