Morphology Optimization for the Fabrication of High Mobility Thin-Film Transistors

Authors

  • Xiangnan Sun,

    1. Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, P.R. China
    2. Graduate School of Chinese Academy of Sciences, Beijing 100039, P.R. China
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  • Lei Zhang,

    1. Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, P.R. China
    2. Graduate School of Chinese Academy of Sciences, Beijing 100039, P.R. China
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  • Chong-an Di,

    1. Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, P.R. China
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  • Yugeng Wen,

    1. Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, P.R. China
    2. Graduate School of Chinese Academy of Sciences, Beijing 100039, P.R. China
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  • Yunlong Guo,

    1. Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, P.R. China
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  • Yan Zhao,

    1. Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, P.R. China
    2. Graduate School of Chinese Academy of Sciences, Beijing 100039, P.R. China
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  • Gui Yu,

    1. Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, P.R. China
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  • Yunqi Liu

    Corresponding author
    1. Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, P.R. China
    • Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, P.R. China.
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Abstract

original image

A novel method to enhance the perform­ance of pentacene thin-film transistors (TFTs) based on a blending polymeric dielectric is reported. By the inter-grain-enhancing process and the nucleation-controlling process, the morphology of pentacene has been optimized and the mobility of OTFT is enhanced up to 3.6 cm2/Vs. The mechanism of this technology is a “heterogeneity-employed” method, which is absolutely different from conventional “homogeneity-aimed” methods.

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