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Advanced Materials

Wafer-Scale Strain Engineering of Ultrathin Semiconductor Crystalline Layers

Authors

  • Marina S. Leite,

    Corresponding author
    1. Thomas J. Waston Laboratories of Applied Physics, Calfornia Institute of Technology, 1200 East Calfornia Blvd., MC 128-95, Pasadena, CA 91125, USA
    • Thomas J. Waston Laboratories of Applied Physics, Calfornia Institute of Technology, 1200 East Calfornia Blvd., MC 128-95, Pasadena, CA 91125, USA.
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  • Emily C. Warmann,

    1. Thomas J. Waston Laboratories of Applied Physics, Calfornia Institute of Technology, 1200 East Calfornia Blvd., MC 128-95, Pasadena, CA 91125, USA
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  • Gregory M. Kimball,

    1. Thomas J. Waston Laboratories of Applied Physics, Calfornia Institute of Technology, 1200 East Calfornia Blvd., MC 128-95, Pasadena, CA 91125, USA
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  • Stanley P. Burgos,

    1. Thomas J. Waston Laboratories of Applied Physics, Calfornia Institute of Technology, 1200 East Calfornia Blvd., MC 128-95, Pasadena, CA 91125, USA
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  • Dennis M. Callahan,

    1. Thomas J. Waston Laboratories of Applied Physics, Calfornia Institute of Technology, 1200 East Calfornia Blvd., MC 128-95, Pasadena, CA 91125, USA
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  • Harry A. Atwater

    1. Thomas J. Waston Laboratories of Applied Physics, Calfornia Institute of Technology, 1200 East Calfornia Blvd., MC 128-95, Pasadena, CA 91125, USA
    2. Kavli Nanoscience Institute, California Institute of Technology, 1200 East Calfornia Blvd., MC 128-95, Pasadena, CA 91125, USA
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Abstract

The fabrication of a wafer-scale dislocation-free, fully relaxed single crystalline template for epitaxial growth is demonstrated. Transferring biaxially-strained InxGa1-xAs ultrathin films from InP substrates to a handle support results in full strain relaxation and the InxGa1-xAs unit cell assumes its bulk value. Our realization demonstrates the ability to control the lattice parameter and energy band structure of single layer crystalline compound semiconductors in an unprecedented way.

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