Control of Graphene Field-Effect Transistors by Interfacial Hydrophobic Self-Assembled Monolayers

Authors

  • Wi Hyoung Lee,

    1. Department of Chemical Engineering, Pohang University of Science and Technology, Pohang, 790-784, Republic of Korea
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  • Jaesung Park,

    1. Center for Superfunctional Materials, Department of Chemistry, Pohang University of Science and Technology, Pohang, 790-784, Republic of Korea
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  • Youngsoo Kim,

    1. Department of Chemistry, Sungkyunkwan University, Suwon, 440-746, Republic of Korea
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  • Kwang S. Kim,

    Corresponding author
    1. Center for Superfunctional Materials, Department of Chemistry, Pohang University of Science and Technology, Pohang, 790-784, Republic of Korea
    • Center for Superfunctional Materials, Department of Chemistry, Pohang University of Science and Technology, Pohang, 790-784, Republic of Korea
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  • Byung Hee Hong,

    Corresponding author
    1. Department of Chemistry, Sungkyunkwan University, Suwon, 440-746, Republic of Korea
    • Department of Chemistry, Sungkyunkwan University, Suwon, 440-746, Republic of Korea
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  • Kilwon Cho

    Corresponding author
    1. Department of Chemical Engineering, Pohang University of Science and Technology, Pohang, 790-784, Republic of Korea
    • Department of Chemical Engineering, Pohang University of Science and Technology, Pohang, 790-784, Republic of Korea.
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Abstract

original image

Hydrophobic self-assembled monolayers (SAMs) with alkyl chains of various lengths were inserted between CVD-grown graphene layers and their SiO2 substrates (figure). As the SAM alkyl chain length increased, substrate-induced doping was suppressed by the ordered close-packed structure of SAMs with long alkyl chains. Accordingly, graphene transistors constructed on SAMs with long alkyl chains exhibited higher electron/hole mobilities with lower Dirac point voltages.

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