Advanced Materials

Ambipolar Oxide Thin-Film Transistor

Authors

  • Kenji Nomura,

    Corresponding author
    1. Frontier Research Center, Mail Box S2-13, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
    • Frontier Research Center, Mail Box S2-13, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan.
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  • Toshio Kamiya,

    1. Materials and Structures Laboratory, Mail Box R3-1, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
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  • Hideo Hosono

    1. Frontier Research Center, Mail Box S2-13, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
    2. Materials and Structures Laboratory, Mail Box R3-1, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
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Abstract

The first ambipolar oxide-based thin-film transistor (TFT) using an SnO channel is presented, demonstrating operation of a complementary-like inverter configured by two ambipolar SnO TFTs. Saturation mobilities of 0.8 and 5 × 10−4 cm2 V−1s−1 are obtained for the p-channel and n-channel modes, respectively, and the inverter shows a maximum voltage gain of 2.5. This is the first demonstration of a complementary-like circuit using a single oxide semiconductor channel and provides an important step toward practical oxide electronics.

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