The first ambipolar oxide-based thin-film transistor (TFT) using an SnO channel is presented, demonstrating operation of a complementary-like inverter configured by two ambipolar SnO TFTs. Saturation mobilities of 0.8 and 5 × 10−4 cm2 V−1s−1 are obtained for the p-channel and n-channel modes, respectively, and the inverter shows a maximum voltage gain of 2.5. This is the first demonstration of a complementary-like circuit using a single oxide semiconductor channel and provides an important step toward practical oxide electronics.
If you can't find a tool you're looking for, please click the link at the top of the page to "Go to old article view". Alternatively, view our Knowledge Base articles for additional help. Your feedback is important to us, so please let us know if you have comments or ideas for improvement.