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Keywords:

  • silicon nanowires;
  • minority carrier lifetimes;
  • reverse recovery transients;
  • photovoltaic devices;
  • surface effects
Thumbnail image of graphical abstract

The minority carrier lifetimes of VLS-grown axial p–n junction silicon nanowires are characterized by the reverse recovery transients of electrically injected minority carriers. Nanowire-diameter-dependent lifetimes and various electrical properties indicate the enhanced surface recombination with decreasing diameters, suggesting the significance of surface passivations for effective carrier transport in photovoltaic applications.