Communication

Minority Carrier Lifetimes and Surface Effects in VLS-Grown Axial p–n Junction Silicon Nanowires

  1. Yeonwoong Jung1,*,
  2. Aleksandar Vacic1,
  3. Daniel E. Perea2,
  4. Samuel T. Picraux2,
  5. Mark A. Reed1

Article first published online: 17 AUG 2011

DOI: 10.1002/adma.201101429

Issue

Advanced Materials

Advanced Materials

Volume 23, Issue 37, pages 4306–4311, October 4, 2011

Additional Information

How to Cite

Jung, Y., Vacic, A., Perea, D. E., Picraux, S. T. and Reed, M. A. (2011), Minority Carrier Lifetimes and Surface Effects in VLS-Grown Axial p–n Junction Silicon Nanowires. Advanced Materials, 23: 4306–4311. doi: 10.1002/adma.201101429

Author Information

  1. 1

    Department of Electrical Engineering and Applied Physics, Yale University, New Haven, CT 06511, USA

  2. 2

    Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, New Mexico 87545, USA

*Department of Electrical Engineering and Applied Physics, Yale University, New Haven, CT 06511, USA.

Publication History

  1. Issue published online: 28 SEP 2011
  2. Article first published online: 17 AUG 2011
  3. Manuscript Received: 14 APR 2011

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Keywords:

  • silicon nanowires;
  • minority carrier lifetimes;
  • reverse recovery transients;
  • photovoltaic devices;
  • surface effects

Graphical Abstract

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The minority carrier lifetimes of VLS-grown axial p–n junction silicon nanowires are characterized by the reverse recovery transients of electrically injected minority carriers. Nanowire-diameter-dependent lifetimes and various electrical properties indicate the enhanced surface recombination with decreasing diameters, suggesting the significance of surface passivations for effective carrier transport in photovoltaic applications.

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