Communication

Minority Carrier Lifetimes and Surface Effects in VLS-Grown Axial p–n Junction Silicon Nanowires

  1. Yeonwoong Jung1,*,
  2. Aleksandar Vacic1,
  3. Daniel E. Perea2,
  4. Samuel T. Picraux2,
  5. Mark A. Reed1

Article first published online: 17 AUG 2011

DOI: 10.1002/adma.201101429

Issue

Advanced Materials

Advanced Materials

Volume 23, Issue 37, pages 4306–4311, October 4, 2011

Additional Information

How to Cite

Jung, Y., Vacic, A., Perea, D. E., Picraux, S. T. and Reed, M. A. (2011), Minority Carrier Lifetimes and Surface Effects in VLS-Grown Axial p–n Junction Silicon Nanowires. Adv. Mater., 23: 4306–4311. doi: 10.1002/adma.201101429

Author Information

  1. 1

    Department of Electrical Engineering and Applied Physics, Yale University, New Haven, CT 06511, USA

  2. 2

    Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, New Mexico 87545, USA

*Department of Electrical Engineering and Applied Physics, Yale University, New Haven, CT 06511, USA.

Publication History

  1. Issue published online: 28 SEP 2011
  2. Article first published online: 17 AUG 2011
  3. Manuscript Received: 14 APR 2011

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