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Simulation of Vapor-Phase Deposition and Growth of a Pentacene Thin Film on C60 (001)

Authors

  • Luca Muccioli,

    Corresponding author
    1. Dipartimento di Chimica Fisica e Inorganica and INSTM, University of Bologna, viale Risorgimento 4, IT-40136 Bologna, Italy
    • Dipartimento di Chimica Fisica e Inorganica and INSTM, University of Bologna, viale Risorgimento 4, IT-40136 Bologna, Italy.

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  • Gabriele D'Avino,

    1. Dipartimento di Chimica Fisica e Inorganica and INSTM, University of Bologna, viale Risorgimento 4, IT-40136 Bologna, Italy
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  • Claudio Zannoni

    1. Dipartimento di Chimica Fisica e Inorganica and INSTM, University of Bologna, viale Risorgimento 4, IT-40136 Bologna, Italy
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Abstract

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The formation of the heterojunction between two organic semiconductors, pentacene on top of Buckminster fullerene, is simulated using a virtual vapor deposition experiment. The thin-film growth is characterized by a lying-to-standing collective reorientation of pentacene molecules, corresponding to the onset of crystalline order. The mechanism is coverage dependent and reorientation occurs earlier for the second monolayer.

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