Advanced Materials

Self-heating and External Strain Coupling Induced Phase Transition of VO2 Nanobeam as Single Domain Switch

Authors

  • Bin Hu,

    1. School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA 30332-0245, USA
    2. State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, School of Materials Science and Engineering, Wuhan University of Technology, Wuhan, 430070, P. R. China
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  • Yan Zhang,

    1. School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA 30332-0245, USA
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  • Wen Chen,

    Corresponding author
    1. State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, School of Materials Science and Engineering, Wuhan University of Technology, Wuhan, 430070, P. R. China
    • State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, School of Materials Science and Engineering, Wuhan University of Technology, Wuhan, 430070, P. R. China
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  • Chen Xu,

    1. School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA 30332-0245, USA
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  • Zhong Lin Wang

    Corresponding author
    1. School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA 30332-0245, USA
    • School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA 30332-0245, USA.
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Abstract

The single domain insulator-to-metal transition in VO2 nanobeam triggered by coupling Joule heating and external strain is utilized to fabricate the high performance electromechanical switch, which can be controlled by stretching or compressing the substrate, and the device has the potential application in high sensitivity strain monitor and micro/nano-systems action control such as dynamic logic gate.

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