Communication: Advanced Optical Materials

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Giant Optical Gain in a Rare-Earth-Ion-Doped Microstructure

  1. Dimitri Geskus,
  2. Shanmugam Aravazhi,
  3. Sonia M. García-Blanco,
  4. Markus Pollnau*

Article first published online: 24 OCT 2011

DOI: 10.1002/adma.201101781

Issue

Advanced Materials

Advanced Materials

Volume 24, Issue 10, pages OP19–OP22, March 8, 2012

Additional Information

How to Cite

Geskus, D., Aravazhi, S., García-Blanco, S. M. and Pollnau, M. (2012), Giant Optical Gain in a Rare-Earth-Ion-Doped Microstructure. Adv. Mater., 24: OP19–OP22. doi: 10.1002/adma.201101781

Author Information

  1. Integrated Optical Micro Systems Group, MESA+ Institute for Nanotechnology, University of Twente, P.O. Box 217, Enschede, 7500 AE, The Netherlands

*Integrated Optical Micro Systems Group, MESA+ Institute for Nanotechnology, University of Twente, P.O. Box 217, Enschede, 7500 AE, The Netherlands.

Publication History

  1. Issue published online: 6 MAR 2012
  2. Article first published online: 24 OCT 2011
  3. Manuscript Revised: 7 SEP 2011
  4. Manuscript Received: 5 MAY 2011

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Keywords:

  • dielectrics;
  • doping;
  • thin films;
  • microstructures;
  • photonics
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Modal gain per unit length versus launched pump power is predicted and measured in a 47.5 at.% Yb3+-doped potassium double tungstate channel waveguide. The highest measured gain exceeds values previously reported for rare-earth-ion-doped materials by two orders of magnitude.

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