Communication

High-Current-Density Monolayer CdSe/ZnS Quantum Dot Light-Emitting Devices with Oxide Electrodes

  1. Edward M. Likovich*,
  2. Rafael Jaramillo,
  3. Kasey J. Russell,
  4. Shriram Ramanathan,
  5. Venkatesh Narayanamurti

Article first published online: 8 SEP 2011

DOI: 10.1002/adma.201101782

Issue

Advanced Materials

Advanced Materials

Volume 23, Issue 39, pages 4521–4525, October 18, 2011

Additional Information

How to Cite

Likovich, E. M., Jaramillo, R., Russell, K. J., Ramanathan, S. and Narayanamurti, V. (2011), High-Current-Density Monolayer CdSe/ZnS Quantum Dot Light-Emitting Devices with Oxide Electrodes. Adv. Mater., 23: 4521–4525. doi: 10.1002/adma.201101782

Author Information

  1. Gordon McKay Laboratory, Harvard University, 9 Oxford St., Cambridge, MA 02138, USA

*Gordon McKay Laboratory, Harvard University, 9 Oxford St., Cambridge, MA 02138, USA.

Publication History

  1. Issue published online: 13 OCT 2011
  2. Article first published online: 8 SEP 2011
  3. Manuscript Received: 11 MAY 2011

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Keywords:

  • light-emitting devices;
  • oxides;
  • quantum dots;
  • atomic layer deposition;
  • photovoltaic devices
Thumbnail image of graphical abstract

Films of semiconductor quantum dots (QDs) are promising for lighting technologies, but controlling how current flows through QD films remains a challenge. A new design for a QD light-emitting device that uses atomic layer deposition to fill the interstices between QDs with insulating oxide is introduced. It funnels current through the QDs themselves, thus increasing the light emission yield.

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