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Keywords:

  • GaN/Si nanoheterostructure;
  • near-infrared light emitting diodes;
  • electroluminescence (EL);
  • silicon nanoporous pillar array (Si-NPA)
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A near-infrared (NIR) light-emitting diode is fabricated by constructing a GaN/Si nanoheterostructure array by growing GaN nanograins onto a silicon nanoporous pillar array (Si-NPA). A strong and tunable NIR electroluminescence is observed and the luminescent mechanism is attributed to the carrier radiative recombination occurring at the interface between GaN and Si-NPA.