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Advanced Materials

Near-Infrared Light Emission from a GaN/Si Nanoheterostructure Array

Authors

  • Chang Bao Han,

    1. Department of Physics and Laboratory of Materials Physics, Zhengzhou University, Zhengzhou, 450052, P. R. China
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  • Chuan He,

    1. Department of Physics and Laboratory of Materials Physics, Zhengzhou University, Zhengzhou, 450052, P. R. China
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  • Xin Jian Li

    Corresponding author
    1. Department of Physics and Laboratory of Materials Physics, Zhengzhou University, Zhengzhou, 450052, P. R. China
    • Department of Physics and Laboratory of Materials Physics, Zhengzhou University, Zhengzhou, 450052, P. R. China.
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Abstract

A near-infrared (NIR) light-emitting diode is fabricated by constructing a GaN/Si nanoheterostructure array by growing GaN nanograins onto a silicon nanoporous pillar array (Si-NPA). A strong and tunable NIR electroluminescence is observed and the luminescent mechanism is attributed to the carrier radiative recombination occurring at the interface between GaN and Si-NPA.

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