A TiO2/VO2 oxide double-layer nanocrossbar to overcome the sneak path problem in bipolar resistive memory is proposed. TiO2 and VO2 thin films function as a bipolar resistive memory and a bidirectional switch, respectively. The new structure suggests that ultrahigh densities can be achieved with a 2D nanocrossbar array layout. By stacking into a 3D structure, the density can be even higher.
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