Oxide Double-Layer Nanocrossbar for Ultrahigh-Density Bipolar Resistive Memory
Version of Record online: 2 AUG 2011
Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Volume 23, Issue 35, pages 4063–4067, September 15, 2011
How to Cite
Chang, S. H., Lee, S. B., Jeon, D. Y., Park, S. J., Kim, G. T., Yang, S. M., Chae, S. C., Yoo, H. K., Kang, B. S., Lee, M.-J. and Noh, T. W. (2011), Oxide Double-Layer Nanocrossbar for Ultrahigh-Density Bipolar Resistive Memory. Adv. Mater., 23: 4063–4067. doi: 10.1002/adma.201102395
- Issue online: 8 SEP 2011
- Version of Record online: 2 AUG 2011
- Manuscript Received: 24 JUN 2011
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