Communication

Growth of Single Crystal Graphene Arrays by Locally Controlling Nucleation on Polycrystalline Cu Using Chemical Vapor Deposition

  1. Wei Wu1,2,
  2. Luis A. Jauregui3,
  3. Zhihua Su2,
  4. Zhihong Liu4,
  5. Jiming Bao2,
  6. Yong P. Chen3,
  7. Qingkai Yu4,*

Article first published online: 23 SEP 2011

DOI: 10.1002/adma.201102456

Issue

Advanced Materials

Advanced Materials

Volume 23, Issue 42, pages 4898–4903, November 9, 2011

Additional Information

How to Cite

Wu, W., Jauregui, L. A., Su, Z., Liu, Z., Bao, J., Chen, Y. P. and Yu, Q. (2011), Growth of Single Crystal Graphene Arrays by Locally Controlling Nucleation on Polycrystalline Cu Using Chemical Vapor Deposition. Adv. Mater., 23: 4898–4903. doi: 10.1002/adma.201102456

Author Information

  1. 1

    Center for Advanced Materials, University of Houston, Houston, TX 77204, USA

  2. 2

    Department of Electrical and Computer Engineering, University of Houston, Houston, TX 77204, USA

  3. 3

    Birck Nanotechnology Center, School of Electrical and Computer Engineering, Department of Physics, Purdue University, West Lafayette, IN 47907, USA

  4. 4

    Ingram School of Engineering, and Materials Science, Engineering and Commercialization Program, Texas State University, San Marcos, TX 78666, USA

*Ingram School of Engineering, and Materials Science, Engineering and Commercialization Program, Texas State University, San Marcos, TX 78666, USA.

Publication History

  1. Issue published online: 26 OCT 2011
  2. Article first published online: 23 SEP 2011
  3. Manuscript Revised: 9 AUG 2011
  4. Manuscript Received: 28 JUN 2011

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Keywords:

  • graphene;
  • chemical vapor deposition;
  • grain boundaries;
  • nuclei
Thumbnail image of graphical abstract

Spatially ordered arrays of single crystal graphene grains are synthesized by locally controlling nucleation on polycrystalline Cu using chemical vapor deposition. The grains can be transferred on an arbitrary substrate for further characterization and device fabrication. This offers a way to potentially fabricate graphene-based devices by regular microelectronic processes free of graphene grain boundaries and with more reliable performances.

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