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Advanced Materials

Transfer-Free Growth of Few-Layer Graphene by Self-Assembled Monolayers

Authors

  • Hyeon-Jin Shin,

    1. Graphene Center, Samsung Advanced Institute of Technology, Yongin, Gyeonggi, 446-712, Republic of Korea
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  • Won Mook Choi,

    1. Graphene Center, Samsung Advanced Institute of Technology, Yongin, Gyeonggi, 446-712, Republic of Korea
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  • Seon-Mi Yoon,

    1. Graphene Center, Samsung Advanced Institute of Technology, Yongin, Gyeonggi, 446-712, Republic of Korea
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  • Gang Hee Han,

    1. BK21 Physics Division, Department of Energy Science, Sungkyunkwan Advanced Institute of Nanotechnology, Sungkyunkwan University, Suwon 440-746, Republic of Korea
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  • Yun Sung Woo,

    1. Graphene Center, Samsung Advanced Institute of Technology, Yongin, Gyeonggi, 446-712, Republic of Korea
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  • Eun Sung Kim,

    1. BK21 Physics Division, Department of Energy Science, Sungkyunkwan Advanced Institute of Nanotechnology, Sungkyunkwan University, Suwon 440-746, Republic of Korea
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  • Seung Jin Chae,

    1. BK21 Physics Division, Department of Energy Science, Sungkyunkwan Advanced Institute of Nanotechnology, Sungkyunkwan University, Suwon 440-746, Republic of Korea
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  • Xiang-Shu Li,

    1. AE Center, Samsung Advanced Institute of Technology, Yongin, Gyeonggi, 446-712, Republic of Korea
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  • Anass Benayad,

    1. AE Center, Samsung Advanced Institute of Technology, Yongin, Gyeonggi, 446-712, Republic of Korea
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  • Duong Dinh Loc,

    1. BK21 Physics Division, Department of Energy Science, Sungkyunkwan Advanced Institute of Nanotechnology, Sungkyunkwan University, Suwon 440-746, Republic of Korea
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  • Fethullah Gunes,

    1. BK21 Physics Division, Department of Energy Science, Sungkyunkwan Advanced Institute of Nanotechnology, Sungkyunkwan University, Suwon 440-746, Republic of Korea
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  • Young Hee Lee,

    Corresponding author
    1. BK21 Physics Division, Department of Energy Science, Sungkyunkwan Advanced Institute of Nanotechnology, Sungkyunkwan University, Suwon 440-746, Republic of Korea
    • BK21 Physics Division, Department of Energy Science, Sungkyunkwan Advanced Institute of Nanotechnology, Sungkyunkwan University, Suwon 440-746, Republic of Korea.
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  • Jae-Young Choi

    Corresponding author
    1. Graphene Center, Samsung Advanced Institute of Technology, Yongin, Gyeonggi, 446-712, Republic of Korea
    • Graphene Center, Samsung Advanced Institute of Technology, Yongin, Gyeonggi, 446-712, Republic of Korea
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Abstract

Graphene layers are directly synthesizedon an oxide substrate without transfer. The catalytic structure aids graphene formation without the vaporization of a self-assembled monolayer (SAM) material and induces direct growth of graphene on the substrate. Film uniformity and the number of graphene layers are modulated. The catalytic structure and growth process provide a robust method for transfer-free graphene growth with uniform thickness.

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