Effective Mobility Enhancement by Using Nanometer Dot Doping in Amorphous IGZO Thin-Film Transistors

Authors

  • Hsiao-Wen Zan,

    Corresponding author
    1. Department of Photonic and Institute of Electro-Optical Engineering, National Chiao Tung University, Hsin-Chu 30010, Taiwan
    • Department of Photonic and Institute of Electro-Optical Engineering, National Chiao Tung University, Hsin-Chu 30010, Taiwan.
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  • Wu-Wei Tsai,

    1. Department of Photonic and Institute of Electro-Optical Engineering, National Chiao Tung University, Hsin-Chu 30010, Taiwan
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  • Chia-Hsin Chen,

    1. Department of Photonic and Institute of Electro-Optical Engineering, National Chiao Tung University, Hsin-Chu 30010, Taiwan
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  • Chuang-Chuang Tsai

    1. Department of Photonic and Institute of Electro-Optical Engineering, National Chiao Tung University, Hsin-Chu 30010, Taiwan
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Abstract

original image

Applying nanometer dot-like doping to the channel region causes the intrinsic and effective mobilities of amorphous indium gallium zinc oxide (a-IGZO) thin-film transistor to increase. The nanodot doping reduces the effective channel length and lowers the energy barrier to facilitate electron transport in the a-IGZO film.

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