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Advanced Materials

Diameter-Dependent Performance of Single-Walled Carbon Nanotube Thin-Film Transistors

Authors

  • Yuki Asada,

    1. Nanotube Research Center, National Institute of Advanced Industrial Science and Technology, 1-1-1 Higashi, Tsukuba, Ibaraki, 305-8565, Japan
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  • Fumiyuki Nihey,

    1. NEC Green Innovation Research Laboratories, Tsukuba, Ibaraki, 305-8501, Japan
    2. Technology Research Association for Single Wall Carbon Nanotubes, Tsukuba, Ibaraki, 305-8565, Japan
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  • Shigekazu Ohmori,

    1. Nanotube Research Center, National Institute of Advanced Industrial Science and Technology, 1-1-1 Higashi, Tsukuba, Ibaraki, 305-8565, Japan
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  • Hisanori Shinohara,

    1. Department of Chemistry, Nagoya University, Chikusa-ku, Nagoya, 464-8602, Japan
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  • Takeshi Saito

    Corresponding author
    1. Nanotube Research Center, National Institute of Advanced Industrial Science and Technology, 1-1-1 Higashi, Tsukuba, Ibaraki, 305-8565, Japan
    2. Technology Research Association for Single Wall Carbon Nanotubes, Tsukuba, Ibaraki, 305-8565, Japan
    • Nanotube Research Center, National Institute of Advanced Industrial Science and Technology, 1-1-1 Higashi, Tsukuba, Ibaraki, 305-8565, Japan.
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Abstract

Single-walled carbon nanotube thin-film transistors (SWCNT-TFTs) with various tube diameters and constant tube length are investigated. Similar variations of on-currents, independent of the diameter, are demonstrated according to percolation theory, but off-currents significantly depend on the diameter. The temperature dependence of the off-currents attributes the observed non-negligible off-state conductance to thermally excited carriers in semiconducting SWCNTs.

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