SEARCH

SEARCH BY CITATION

Keywords:

  • correlated electron oxides;
  • phase diagram;
  • metal–insulator transition;
  • field-effect transistors
Thumbnail image of graphical abstract

A prototype Mott transistor, the electric double layer transistor with a strained CaMnO3 thin film, is fabricated. As predicted by the strain phase diagram of electron-doped manganite films, the device with the compressively strained CaMnO3 exhibits an immense conductivity modulation upon applying a tiny gate voltage of 2 V.