Advanced Materials

Strain-Mediated Phase Control and Electrolyte-Gating of Electron-Doped Manganites

Authors

  • Ping-Hua Xiang,

    Corresponding author
    1. National Institute of Advanced Industrial, Science and Technology (AIST), Tsukuba 305-8562, Japan
    2. CREST, Japan Science and Technology Agency, Kawaguchi 332-0012, Japan
    • National Institute of Advanced Industrial, Science and Technology (AIST), Tsukuba 305-8562, Japan.
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  • Shutaro Asanuma,

    1. National Institute of Advanced Industrial, Science and Technology (AIST), Tsukuba 305-8562, Japan
    2. CREST, Japan Science and Technology Agency, Kawaguchi 332-0012, Japan
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  • Hiroyuki Yamada,

    1. National Institute of Advanced Industrial, Science and Technology (AIST), Tsukuba 305-8562, Japan
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  • Isao H. Inoue,

    1. National Institute of Advanced Industrial, Science and Technology (AIST), Tsukuba 305-8562, Japan
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  • Hiroshi Sato,

    1. National Institute of Advanced Industrial, Science and Technology (AIST), Tsukuba 305-8562, Japan
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  • Hiroshi Akoh,

    1. National Institute of Advanced Industrial, Science and Technology (AIST), Tsukuba 305-8562, Japan
    2. CREST, Japan Science and Technology Agency, Kawaguchi 332-0012, Japan
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  • Akihito Sawa,

    Corresponding author
    1. National Institute of Advanced Industrial, Science and Technology (AIST), Tsukuba 305-8562, Japan
    • National Institute of Advanced Industrial, Science and Technology (AIST), Tsukuba 305-8562, Japan.
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  • Kazunori Ueno,

    1. Department of Basic Science, University of Tokyo, Tokyo 153-8902, Japan, PRESTO, Japan Science and Technology Agency, Kawaguchi 332-0012, Japan
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  • Hongtao Yuan,

    1. Quantum-Phase Electronics Center and Department of Applied Physics, University of Tokyo, Tokyo 113-8656, Japan
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  • Hidekazu Shimotani,

    1. Quantum-Phase Electronics Center and Department of Applied Physics, University of Tokyo, Tokyo 113-8656, Japan
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  • Masashi Kawasaki,

    1. Quantum-Phase Electronics Center and Department of Applied Physics, University of Tokyo, Tokyo 113-8656, Japan
    2. CERG, RIKEN, Wako 351-0198, Japan
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  • Yoshihiro Iwasa

    1. Quantum-Phase Electronics Center and Department of Applied Physics, University of Tokyo, Tokyo 113-8656, Japan
    2. CERG, RIKEN, Wako 351-0198, Japan
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Abstract

A prototype Mott transistor, the electric double layer transistor with a strained CaMnO3 thin film, is fabricated. As predicted by the strain phase diagram of electron-doped manganite films, the device with the compressively strained CaMnO3 exhibits an immense conductivity modulation upon applying a tiny gate voltage of 2 V.

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