Advanced Materials

High-Performance Organic Single-Crystal Field-Effect Transistors of Indolo[3,2-b]carbazole and Their Potential Applications in Gas Controlled Organic Memory Devices

Authors

  • Hui Jiang,

    Corresponding author
    1. School of Materials Science and Engineering, Nanyang Technological University Singapore 639798
    2. Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190 P. R. China
    • School of Materials Science and Engineering, Nanyang Technological University Singapore 639798
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  • Huaping Zhao,

    1. Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190 P. R. China
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  • Keke K. Zhang,

    1. School of Materials Science and Engineering, Nanyang Technological University Singapore 639798
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  • Xiaodong Chen,

    1. School of Materials Science and Engineering, Nanyang Technological University Singapore 639798
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  • Christian Kloc,

    Corresponding author
    1. School of Materials Science and Engineering, Nanyang Technological University Singapore 639798
    • School of Materials Science and Engineering, Nanyang Technological University Singapore 639798
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  • Wenping Hu

    Corresponding author
    1. Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190 P. R. China
    • Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190 P. R. China.
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Abstract

Single crystals of linear fused rings with nitrogen heteroatom, indolo[3,2-b]carbazole (ICZ), have been synthesized. In addition, field-effect transistors (FETs) of planar ICZ single crystals have been fabricated. The hole mobility approaches values of up to 1.0 cm2 V−1 s−1 with an on/off ratio of ∼106. The transistors exhibit sensitivity to nitric oxide (NO). The gas-sensitive behavior indicates the great potential for future low-cost and high-density storage devices.

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