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Advanced Materials

Combinatorial Optimization of a Molecular Glass Photoresist System for Electron Beam Lithography

Authors

  • Wolfgang-Andreas C. Bauer,

    1. Melville Laboratory for Polymer Synthesis, Department of Chemistry, University of Cambridge, Cambridge CB2 1EW, UK
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  • Christian Neuber,

    1. Makromolekulare Chemie I, Bayreuther Institut für Makromolekülforschung (BIMF) and Bayreuther Zentrum für Kolloide und Grenzflächen (BZKG), Universität Bayreuth, 95440 Bayreuth, Germany
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  • Christopher K. Ober,

    1. Department of Chemistry and Chemical Biology, Cornell University, Ithaca, NY 14853, USA
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  • Hans-Werner Schmidt

    Corresponding author
    1. Makromolekulare Chemie I, Bayreuther Institut für Makromolekülforschung (BIMF) and Bayreuther Zentrum für Kolloide und Grenzflächen (BZKG), Universität Bayreuth, 95440 Bayreuth, Germany
    • Makromolekulare Chemie I, Bayreuther Institut für Makromolekülforschung (BIMF) and Bayreuther Zentrum für Kolloide und Grenzflächen (BZKG), Universität Bayreuth, 95440 Bayreuth, Germany.
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Abstract

Electron beam lithography is a powerful technique for the productionof nanostructures but pattern quality depends on numerous interacting process variables. Orthogonal gradients of resist composition, baking temperatures, and development time as well as dose variations inside writing fields are used to prepare ternary combinatorial libraries for an efficient stepwise optimization of a molecular glass negative tone resist system.

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