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Low-Temperature, Solution-Processed and Alkali Metal Doped ZnO for High-Performance Thin-Film Transistors

Authors

  • Si Yun Park,

    1. Department of Nano Science and Technology, Graduate School of Convergence Science and Technology, Seoul National University, Seoul 151-744, Republic of Korea
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  • Beom Joon Kim,

    1. SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 440-746, Republic of Korea
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  • Kyongjun Kim,

    1. Department of Nano Science and Technology, Graduate School of Convergence Science and Technology, Seoul National University, Seoul 151-744, Republic of Korea
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  • Moon Sung Kang,

    1. Department of Chemical Engineering and Materials Science, University of Minnesota, 421 Washington Avenue SE, Minneapolis, Minnesota 55455, USA
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  • Keon-Hee Lim,

    1. Department of Nano Science and Technology, Graduate School of Convergence Science and Technology, Seoul National University, Seoul 151-744, Republic of Korea
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  • Tae Il Lee,

    1. Department of Materials Science and Engineering, Yonsei University, Seoul, 120-749, Republic of Korea
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  • Jae M. Myoung,

    1. Department of Materials Science and Engineering, Yonsei University, Seoul, 120-749, Republic of Korea
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  • Hong Koo Baik,

    1. Department of Materials Science and Engineering, Yonsei University, Seoul, 120-749, Republic of Korea
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  • Jeong Ho Cho,

    Corresponding author
    1. SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 440-746, Republic of Korea
    • SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 440-746, Republic of Korea
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  • Youn Sang Kim

    Corresponding author
    1. Department of Nano Science and Technology, Graduate School of Convergence Science and Technology, Seoul National University, Seoul 151-744, Republic of Korea
    2. Advanced Institutes of Convergence Technology, 864-1 Lui-ong, Yeongtong-gu, Suwon-si, Gyeonggi-do 443-270, Republic of Korea
    • Department of Nano Science and Technology, Graduate School of Convergence Science and Technology, Seoul National University, Seoul 151-744, Republic of Korea.
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Abstract

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Transfer characteristics of ZnO thin-film transistors (TFTs) based on ZnO doped with various alkali metals. A new doping method is demonstrated by employing alkali metals to achieve high-performance and solution-processed ZnO TFTs with a low processing temperature (∼300 °C), which is applicable to flexible plastic substrates.

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