A flexible organic non-volatile memory transistor on a 50 μm polyethylene naphtalate (PEN) substrate is presented. The gate and floating gate dielectric are prepared by potentiostatic anodization of aluminum, resulting in dense aluminum oxide high-k dielectric films. Such memory transistors show tuneable program and erase voltages and a large charge retention time.
If you can't find a tool you're looking for, please click the link at the top of the page to "Go to old article view". Alternatively, view our Knowledge Base articles for additional help. Your feedback is important to us, so please let us know if you have comments or ideas for improvement.