Communication

Vacuum Lamination Approach to Fabrication of High-Performance Single-Crystal Organic Field-Effect Transistors

  1. H. T. Yi2,
  2. Y. Chen2,
  3. K. Czelen2,
  4. V. Podzorov1,*

Article first published online: 22 NOV 2011

DOI: 10.1002/adma.201103305

Issue

Advanced Materials

Advanced Materials

Volume 23, Issue 48, pages 5807–5811, December 22, 2011

Additional Information

How to Cite

Yi, H. T., Chen, Y., Czelen, K. and Podzorov, V. (2011), Vacuum Lamination Approach to Fabrication of High-Performance Single-Crystal Organic Field-Effect Transistors. Adv. Mater., 23: 5807–5811. doi: 10.1002/adma.201103305

Author Information

  1. 1

    Department of Physics and Astronomy, Rutgers University, Piscataway, NJ 08854, USA, Institute for Advanced Materials and Devices for Nanotechnology (IAMDN), Rutgers University, Piscataway, NJ 08854, USA

  2. 2

    Department of Physics and Astronomy, Rutgers University, Piscataway, NJ 08854, USA

*Department of Physics and Astronomy, Rutgers University, Piscataway, NJ 08854, USA, Institute for Advanced Materials and Devices for Nanotechnology (IAMDN), Rutgers University, Piscataway, NJ 08854, USA.

Publication History

  1. Issue published online: 15 DEC 2011
  2. Article first published online: 22 NOV 2011
  3. Manuscript Revised: 21 OCT 2011
  4. Manuscript Received: 29 AUG 2011

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Keywords:

  • organic single crystals;
  • field effect transistors;
  • self-assembled monolayers
Thumbnail image of graphical abstract

A novel vacuum lamination approach to fabrication of high-performance single-crystal organic field-effect transistors has been developed. The non-destructive nature of this method allows a direct comparison of field-effect mobilities achieved with various gate dielectrics using the same single-crystal sample. The method also allows gating delicate systems, such as n -type crystals and SAM-coated surfaces, without perturbation.

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