Advanced Materials

Vacuum Lamination Approach to Fabrication of High-Performance Single-Crystal Organic Field-Effect Transistors

Authors

  • H. T. Yi,

    1. Department of Physics and Astronomy, Rutgers University, Piscataway, NJ 08854, USA
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  • Y. Chen,

    1. Department of Physics and Astronomy, Rutgers University, Piscataway, NJ 08854, USA
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  • K. Czelen,

    1. Department of Physics and Astronomy, Rutgers University, Piscataway, NJ 08854, USA
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  • V. Podzorov

    Corresponding author
    1. Department of Physics and Astronomy, Rutgers University, Piscataway, NJ 08854, USA, Institute for Advanced Materials and Devices for Nanotechnology (IAMDN), Rutgers University, Piscataway, NJ 08854, USA
    • Department of Physics and Astronomy, Rutgers University, Piscataway, NJ 08854, USA, Institute for Advanced Materials and Devices for Nanotechnology (IAMDN), Rutgers University, Piscataway, NJ 08854, USA.
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Abstract

A novel vacuum lamination approach to fabrication of high-performance single-crystal organic field-effect transistors has been developed. The non-destructive nature of this method allows a direct comparison of field-effect mobilities achieved with various gate dielectrics using the same single-crystal sample. The method also allows gating delicate systems, such as n -type crystals and SAM-coated surfaces, without perturbation.

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