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Anatomy of a Nanoscale Conduction Channel Reveals the Mechanism of a High-Performance Memristor

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By employing a precise method for locating and directlyimaging the active switching region in a resistive random access memory (RRAM) device, a nanoscale conducting channel consisting of an amorphous Ta(O) solid solution surrounded by nearly stoichiometric Ta2O5 is observed. Structural and chemical analysis of the channel combined with temperature-dependent transport measurements indicate a unique resistance switching mechanism.

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