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Advanced Materials

Single-Gate Bandgap Opening of Bilayer Graphene by Dual Molecular Doping

Authors

  • Jaesung Park,

    1. Center for Superfunctional Materials, Department of Chemistry, Pohang University of Science and Technology, Pohang 790-784, Korea
    Current affiliation:
    1. These authors contributed equally to this work.
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  • Sae Byeok Jo,

    1. Department of Chemical Engineering, Pohang University of Science and Technology, Pohang 790-784, Korea
    Current affiliation:
    1. These authors contributed equally to this work.
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  • Young-Jun Yu,

    1. Center for Superfunctional Materials, Department of Chemistry, Pohang University of Science and Technology, Pohang 790-784, Korea
    2. Department of Physics, Columbia University, New York, NY 10027, USA
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  • Youngsoo Kim,

    1. Department of Chemistry, Sungkyunkwan University, Suwon 440-746, Korea
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  • Jae Won Yang,

    1. Department of Physics, Pohang University of Science and Technology, Pohang 790-784, Korea
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  • Wi Hyoung Lee,

    1. Center for Superfunctional Materials, Department of Chemistry, Pohang University of Science and Technology, Pohang 790-784, Korea
    2. Department of Chemical Engineering, Pohang University of Science and Technology, Pohang 790-784, Korea
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  • Hyun Ho Kim,

    1. Department of Chemical Engineering, Pohang University of Science and Technology, Pohang 790-784, Korea
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  • Byung Hee Hong,

    1. Department of Chemistry, Sungkyunkwan University, Suwon 440-746, Korea
    2. Department of Chemistry, Seoul National University, 151-742, Korea
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  • Philip Kim,

    1. Department of Physics, Columbia University, New York, NY 10027, USA
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  • Kilwon Cho,

    Corresponding author
    1. Department of Chemical Engineering, Pohang University of Science and Technology, Pohang 790-784, Korea
    • Kilwon Cho, Department of Chemical Engineering, Pohang University of Science and Technology, Pohang 790-784, Korea

      Kwang S. Kim, Center for Superfunctional Materials, Department of Chemistry, Pohang University of Science and Technology, Pohang 790-784, Korea.

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  • Kwang S. Kim

    Corresponding author
    1. Center for Superfunctional Materials, Department of Chemistry, Pohang University of Science and Technology, Pohang 790-784, Korea
    • Kilwon Cho, Department of Chemical Engineering, Pohang University of Science and Technology, Pohang 790-784, Korea

      Kwang S. Kim, Center for Superfunctional Materials, Department of Chemistry, Pohang University of Science and Technology, Pohang 790-784, Korea.

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Abstract

Dual doping-driven perpendicular electric field with opposite directions remarkably increase the on/off current ratio of bilayer graphene field-effect transistors. This unambiguously proves that it is possible to open a bandgap with two molecular dopants (F4-TCNQ and NH2-functionalized self-assembled monolayers (SAMs)) even in a single-gate device structure.

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