Communication

Control of Efficiency, Brightness, and Recombination Zone in Light-Emitting Field Effect Transistors

  1. Ben B.Y. Hsu1,
  2. Chunhui Duan4,
  3. Ebinazar B. Namdas2,
  4. Andrea Gutacker1,
  5. Jonathan D. Yuen1,
  6. Fei Huang4,
  7. Yong Cao4,
  8. Guillermo C. Bazan1,
  9. Ifor D. W. Samuel3,
  10. Alan J. Heeger1,*

Article first published online: 26 JAN 2012

DOI: 10.1002/adma.201103513

Issue

Advanced Materials

Advanced Materials

Volume 24, Issue 9, pages 1171–1175, March 2, 2012

Additional Information

How to Cite

Hsu, B. B.Y., Duan, C., Namdas, E. B., Gutacker, A., Yuen, J. D., Huang, F., Cao, Y., Bazan, G. C., Samuel, I. D. W. and Heeger, A. J. (2012), Control of Efficiency, Brightness, and Recombination Zone in Light-Emitting Field Effect Transistors. Adv. Mater., 24: 1171–1175. doi: 10.1002/adma.201103513

Author Information

  1. 1

    Center for Polymers and Organic Solids, University of California, Santa Barbara, USA

  2. 2

    Centre for Organic Photonics and Electronics, The University of Queensland, Brisbane, Queensland, Australia

  3. 3

    Organic Semiconductor Centre, SUPA, School of Physics and Astronomy, University of St Andrews, UK

  4. 4

    Institute of Polymer Optoelectronic Materials & Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, P. R. China

*Center for Polymers and Organic Solids, University of California, Santa Barbara, USA.

Publication History

  1. Issue published online: 24 FEB 2012
  2. Article first published online: 26 JAN 2012
  3. Manuscript Revised: 27 OCT 2011
  4. Manuscript Received: 13 SEP 2011

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Keywords:

  • organic semiconductors;
  • light emitting field effect transistor;
  • split-gate;
  • and injection
Thumbnail image of graphical abstract

The split-gate light emitting field effect transistors (SG-LEFETs) demonstrate a new strategy for ambipolar LEFETs to achieve high brightness and efficiency simultaneously. The SG architecture forces largest quantity of opposite charges on Gate 1 and Gate 2 area to meet in the center of the channel. By actively and independently controlling current injection from separated gate electrodes within transporting channel, high brightness can be obtained in the largest injection current regime with highest efficiency.

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