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Communication

Magnetoresistance Switch Effect of a Sn-Doped Bi2Te3 Topological Insulator

  1. Hong Bin Zhang,
  2. Hai Lin Yu,
  3. Ding Hua Bao,
  4. Shu Wei Li,
  5. Cheng Xin Wang,
  6. Guo Wei Yang*

Article first published online: 2 DEC 2011

DOI: 10.1002/adma.201103530

Issue

Advanced Materials

Advanced Materials

Volume 24, Issue 1, pages 132–136, January 3, 2012

Additional Information

How to Cite

Zhang, H. B., Yu, H. L., Bao, D. H., Li, S. W., Wang, C. X. and Yang, G. W. (2012), Magnetoresistance Switch Effect of a Sn-Doped Bi2Te3 Topological Insulator. Adv. Mater., 24: 132–136. doi: 10.1002/adma.201103530

Author Information

  1. State Key Laboratory of Optoelectronic Materials and Technologies, Institute of Optoelectronic and Functional Composite Materials, Nanotechnology Research Center, School of Physics and Engineering, Sun Yat-sen University, Guangzhou 510275, Guangdong, China

*State Key Laboratory of Optoelectronic Materials and Technologies, Institute of Optoelectronic and Functional Composite Materials, Nanotechnology Research Center, School of Physics and Engineering, Sun Yat-sen University, Guangzhou 510275, Guangdong, China.

Publication History

  1. Issue published online: 29 DEC 2011
  2. Article first published online: 2 DEC 2011
  3. Manuscript Revised: 10 NOV 2011
  4. Manuscript Received: 14 SEP 2011

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