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Keywords:

  • organic thin film transistors;
  • high-k gate dielectrics;
  • relaxor ferroelectric polymers
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A relaxor ferroelectric polymer poly(vinylidene fluoride-trifluoroethylene-chlorofloroethylene) exhibits a high relative dielectric constant (k) (∼60). The high-k polymer is used successfully in solution processable low-voltage OTFTs as the gate insulator for the first time. Both n-channel and p-channel OTFTs based on conjugated polymers are fabricated and show carrier mobilities higher than 0.1 cm2 V−1 s−1 at an operating voltage of 3 V.