Solution Processable Low-Voltage Organic Thin Film Transistors with High-k Relaxor Ferroelectric Polymer as Gate Insulator
Version of Record online: 24 NOV 2011
Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Volume 24, Issue 1, pages 88–93, January 3, 2012
How to Cite
Li, J., Sun, Z. and Yan, F. (2012), Solution Processable Low-Voltage Organic Thin Film Transistors with High-k Relaxor Ferroelectric Polymer as Gate Insulator. Adv. Mater., 24: 88–93. doi: 10.1002/adma.201103542
- Issue online: 29 DEC 2011
- Version of Record online: 24 NOV 2011
- Manuscript Revised: 24 OCT 2011
- Manuscript Received: 14 SEP 2011
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