Communication
Multilevel Data Storage Memory Using Deterministic Polarization Control
Article first published online: 12 DEC 2011
DOI: 10.1002/adma.201103679
Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Additional Information
How to Cite
Lee, D., Yang, S. M., Kim, T. H., Jeon, B. C., Kim, Y. S., Yoon, J.-G., Lee, H. N., Baek, S. H., Eom, C. B. and Noh, T. W. (2012), Multilevel Data Storage Memory Using Deterministic Polarization Control. Adv. Mater., 24: 402–406. doi: 10.1002/adma.201103679
Publication History
- Issue published online: 10 JAN 2012
- Article first published online: 12 DEC 2011
- Manuscript Revised: 4 NOV 2011
- Manuscript Received: 26 SEP 2011
Keywords:
- ferroelectric random access memory;
- ferroelectrics;
- multilevel systems;
- non-volatile memory

Multilevel non-volatile memory for high-density date storage is achieved by using the deterministic control of ferroelectric polarization. In a real ferroelectric thin-film system, eight stable and reproducible polarization states are realized (i.e., 3-bit data storage) by adjusting the displacement current. This approach can be used to triple or quadruple the memory density, even at existing feature scales.

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