• Please log in or register to access this feature.

SEARCH

SEARCH BY CITATION

Keywords:

  • ferroelectric random access memory;
  • ferroelectrics;
  • multilevel systems;
  • non-volatile memory
Thumbnail image of graphical abstract

Multilevel non-volatile memory for high-density date storage is achieved by using the deterministic control of ferroelectric polarization. In a real ferroelectric thin-film system, eight stable and reproducible polarization states are realized (i.e., 3-bit data storage) by adjusting the displacement current. This approach can be used to triple or quadruple the memory density, even at existing feature scales.