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The Position of Nitrogen in N-Heteropentacenes Matters

Authors

  • Zhixiong Liang,

    1. Department of Chemistry, The Chinese University of Hong Kong, Shatin, New Territories, Hong Kong, China
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  • Qin Tang,

    1. Department of Chemistry, The Chinese University of Hong Kong, Shatin, New Territories, Hong Kong, China
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  • Renxin Mao,

    1. Department of Chemistry, The Chinese University of Hong Kong, Shatin, New Territories, Hong Kong, China
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  • Danqing Liu,

    1. Department of Chemistry, The Chinese University of Hong Kong, Shatin, New Territories, Hong Kong, China
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  • Jianbin Xu,

    1. Department of Electronic Engineering, The Chinese University of Hong Kong, Shatin, New Territories, Hong Kong, China
    2. Materials Science and Technology Research Center, The Chinese University of Hong Kong, Shatin, New Territories, Hong Kong, China
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  • Qian Miao

    Corresponding author
    1. Department of Chemistry, The Chinese University of Hong Kong, Shatin, New Territories, Hong Kong, China
    2. Center of Novel Functional Molecules, The Chinese University of Hong Kong, Shatin, New Territories, Hong Kong, China
    3. Institute of Molecular Functional Materials (Areas of Excellence Scheme University Grants Committee), Hong Kong, China
    • Department of Chemistry, The Chinese University of Hong Kong, Shatin, New Territories, Hong Kong, China.
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Abstract

An exploratory study on novel silylethynylated N-heteropentacenes, which have their N atoms on the terminal rings of the pentacene backbone, is reported. This study leads to both p- and n-channel organic thin-film transistors with high field-effect mobility and also reveals that the position of the N atoms plays an important role in tuning the structures and properties of organic semiconductors based on N-heteropentacenes.

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