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Microstructures of GaN Thin Films Grown on Graphene Layers

Authors

  • Hyobin Yoo,

    1. Department of Materials Science and Engineering, Seoul National University, Seoul 151-744, Korea
    2. National Creative Research Initiative Center for Semiconductor, Nanorods, and Department of Physics and Astronomy, Seoul National University, Seoul 151-747, Korea
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  • Kunook Chung,

    1. National Creative Research Initiative Center for Semiconductor, Nanorods, and Department of Physics and Astronomy, Seoul National University, Seoul 151-747, Korea
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  • Yong Seok Choi,

    1. Department of Materials Science and Engineering, Seoul National University, Seoul 151-744, Korea
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  • Chan Soon Kang,

    1. Department of Materials Science and Engineering, Seoul National University, Seoul 151-744, Korea
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  • Kyu Hwan Oh,

    1. Department of Materials Science and Engineering, Seoul National University, Seoul 151-744, Korea
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  • Miyoung Kim,

    Corresponding author
    1. Department of Materials Science and Engineering, Seoul National University, Seoul 151-744, Korea
    • Miyoung Kim, Department of Materials Science and Engineering, Seoul National University, Seoul 151-744, Korea

      Gyu-Chul Yi, National Creative Research Initiative Center for Semiconductor, Nanorods, and Department of Physics and Astronomy, Seoul National University, Seoul 151-747, Korea.

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  • Gyu-Chul Yi

    Corresponding author
    1. National Creative Research Initiative Center for Semiconductor, Nanorods, and Department of Physics and Astronomy, Seoul National University, Seoul 151-747, Korea
    • Miyoung Kim, Department of Materials Science and Engineering, Seoul National University, Seoul 151-744, Korea

      Gyu-Chul Yi, National Creative Research Initiative Center for Semiconductor, Nanorods, and Department of Physics and Astronomy, Seoul National University, Seoul 151-747, Korea.

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Abstract

original image

Plan-view and cross-sectional transmission electron microscopy images show the microstructural properties of GaN thin films grown on graphene layers, including dislocation types and density, crystalline orientation and grain boundaries. The roles of ZnO nanowalls and GaN intermediate layers in the heteroepitaxial growth of GaN on graphene, revealed by cross-sectional transmission electron microscopy, are also discussed.

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