Communication

Polarization-Induced Charge Distribution at Homogeneous Zincblende/Wurtzite Heterostructural Junctions in ZnSe Nanobelts

  1. Luying Li1,2,*,
  2. Lei Jin2,
  3. Jianbo Wang2,*,
  4. David J. Smith1,
  5. Wan-Jian Yin3,
  6. Yanfa Yan3,
  7. Hongqian Sang2,
  8. Wallace C. H. Choy4,*,
  9. Martha R. McCartney1

Article first published online: 2 FEB 2012

DOI: 10.1002/adma.201103920

Issue

Advanced Materials

Advanced Materials

Volume 24, Issue 10, pages 1328–1332, March 8, 2012

Additional Information

How to Cite

Li, L., Jin, L., Wang, J., Smith, D. J., Yin, W.-J., Yan, Y., Sang, H., Choy, W. C. H. and McCartney, M. R. (2012), Polarization-Induced Charge Distribution at Homogeneous Zincblende/Wurtzite Heterostructural Junctions in ZnSe Nanobelts. Adv. Mater., 24: 1328–1332. doi: 10.1002/adma.201103920

Author Information

  1. 1

    Department of Physics, Arizona State University, Tempe, Arizona 85287-1504, USA

  2. 2

    School of Physics and Technology, Center for Electron Microscopy and MOE key Laboratory of Artificial, Micro- and Nano-Structures, Wuhan University, Wuhan 430072, China

  3. 3

    National Renewable Energy Laboratory, Golden, Colorado 80401, USA

  4. 4

    Department of Electrical and Electronic Engineering, University of Hong Kong, Pokfulam Road, Hong Kong, China

*Department of Physics, Arizona State University, Tempe, Arizona 85287-1504, USA

Publication History

  1. Issue published online: 6 MAR 2012
  2. Article first published online: 2 FEB 2012
  3. Manuscript Revised: 9 DEC 2011
  4. Manuscript Received: 12 OCT 2011

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Keywords:

  • electron holography;
  • ZnSe;
  • semiconductors;
  • nanocrystals;
  • structure-property relationships
Thumbnail image of graphical abstract

Homogeneous heterostructural wurtzite (WZ)/zincblende (ZB) junctions are successfully fabricated in ZnSe nanobelts. Polarity continuity across the ZB/WZ interface is demonstrated. The saw-tooth-like potential profile induced by spontaneous polarization across the WZ/ZB/WZ interfaces is identified directly at the nanoscale. The polarization-induced charge distribution across the homogeneous heterostructural interfaces is proposed as a viable alternative approach towards charge tailoring in semiconductor nanostructures.

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