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Band-Like Electron Transport in Organic Transistors and Implication of the Molecular Structure for Performance Optimization

Authors

  • Nikolas A. Minder,

    1. DPMC and GAP, University of Geneva, 24 quai Ernest-Ansermet, CH - 1211 Geneva, Switzerland
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  • Shimpei Ono,

    1. DPMC and GAP, University of Geneva, 24 quai Ernest-Ansermet, CH - 1211 Geneva, Switzerland
    2. Central Research Institute of Electric Power Industry, Komae, Tokyo 201-8511, Japan
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  • Zhihua Chen,

    1. Polyera Corporation, 8045 Lamon Avenue, Skokie, IL 60077, USA
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  • Antonio Facchetti,

    Corresponding author
    1. Polyera Corporation, 8045 Lamon Avenue, Skokie, IL 60077, USA
    2. Department of Chemistry and Material Research Center, Northwestern University, 2145 Sheridan Road, Evanston, IL 60208, USA
    • Antonio Facchetti, Polyera Corporation, 8045 Lamon Avenue, Skokie, IL 60077, USA

      Alberto F. Morpurgo, DPMC and GAP, University of Geneva, 24 quai Ernest-Ansermet, CH - 1211 Geneva, Switzerland.

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  • Alberto F. Morpurgo

    Corresponding author
    1. DPMC and GAP, University of Geneva, 24 quai Ernest-Ansermet, CH - 1211 Geneva, Switzerland
    • Antonio Facchetti, Polyera Corporation, 8045 Lamon Avenue, Skokie, IL 60077, USA

      Alberto F. Morpurgo, DPMC and GAP, University of Geneva, 24 quai Ernest-Ansermet, CH - 1211 Geneva, Switzerland.

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Abstract

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The Hall effect and an increase of field-effect mobility with decreasing temperature is observerd in n-channel single-crystal organic field-effect transistors (OFETs). A quantitative analysis of these findings, together with results on different p-channel transistors, indicate the importance of the semiconductor molecular polarizability and the structure of the charge transport layers in the crystal for the observation of band-like transport in OFETs.

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