Get access

Direct Observations of Retention Failure in Ferroelectric Memories

Authors

  • Peng Gao,

    1. Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109, USA
    Current affiliation:
    1. P. G. and C. T. N. contributed equally to this work.
    Search for more papers by this author
  • Christopher T. Nelson,

    1. Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109, USA
    Current affiliation:
    1. P. G. and C. T. N. contributed equally to this work.
    Search for more papers by this author
  • Jacob R. Jokisaari,

    1. Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109, USA
    Search for more papers by this author
  • Yi Zhang,

    1. Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109, USA
    2. National Laboratory of Solid State Microstructures and Department of Materials Science and Engineering, Nanjing University, Nanjing, 210093, P.R. China
    Search for more papers by this author
  • Seung-Hyub Baek,

    1. Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, USA
    Search for more papers by this author
  • Chung Wung Bark,

    1. Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, USA
    Search for more papers by this author
  • Enge Wang,

    1. International Center for Quantum Materials and School of Physics, Peking University, Beijing 100871, China
    Search for more papers by this author
  • Yuanming Liu,

    1. Department of Mechanical Engineering, University of Washington, Seattle, WA 98195, USA
    Search for more papers by this author
  • Jiangyu Li,

    1. Department of Mechanical Engineering, University of Washington, Seattle, WA 98195, USA
    Search for more papers by this author
  • Chang-Beom Eom,

    1. Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, USA
    Search for more papers by this author
  • Xiaoqing Pan

    Corresponding author
    1. Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109, USA
    • Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109, USA.

    Search for more papers by this author

Abstract

original image

Nonvolatile ferroelectric random-access memory uses ferroelectric thin films to save a polar state written by an electric field that is retained when the field is removed. After switching, the high energy of the domain walls separating regions of unlike polarization can drive backswiching resulting in a loss of switched domain volume, or in the case of very small domains, complete retention loss.

Get access to the full text of this article

Ancillary