Communication

Enhancement of Photocurrent in Ferroelectric Films Via the Incorporation of Narrow Bandgap Nanoparticles

  1. Xiaoluan Yang1,
  2. Xiaodong Su1,*,
  3. Mingrong Shen1,
  4. Fengang Zheng1,*,
  5. Yu Xin1,
  6. Lu Zhang1,
  7. Muchuan Hua1,
  8. Yajie Chen2,*,
  9. V. G. Harris2

Article first published online: 26 JAN 2012

DOI: 10.1002/adma.201104078

Issue

Advanced Materials

Advanced Materials

Volume 24, Issue 9, pages 1202–1208, March 2, 2012

Additional Information

How to Cite

Yang, X., Su, X., Shen, M., Zheng, F., Xin, Y., Zhang, L., Hua, M., Chen, Y. and Harris, V. G. (2012), Enhancement of Photocurrent in Ferroelectric Films Via the Incorporation of Narrow Bandgap Nanoparticles. Adv. Mater., 24: 1202–1208. doi: 10.1002/adma.201104078

Author Information

  1. 1

    Jiangsu Key Laboratory of Thin Films, Department of Physics, Soochow University, 1 Shizi street, Suzhou, 215006, P.R. China

  2. 2

    Department of Electrical and Computer Engineering and the Center for Microwave Magnetic Materials and Integrated Circuits, Northeastern University, Boston, MA 02115, USA

*Jiangsu Key Laboratory of Thin Films, Department of Physics, Soochow University, 1 Shizi street, Suzhou, 215006, P.R. China

Publication History

  1. Issue published online: 24 FEB 2012
  2. Article first published online: 26 JAN 2012
  3. Manuscript Received: 24 OCT 2011

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Keywords:

  • photovoltaic effect;
  • ferroelectric;
  • PZT films;
  • Ag2O nanoparticles;
  • narrow band semiconductor
Thumbnail image of graphical abstract

A novel nanostructured ferroelectric photovoltaic material, consisting of the ferroelectric lead zirconate titanate (PZT) film and Ag2O semiconductor nanoparticles of comparatively narrow bandgap, has demonstrated a remarkable enhancement in the photovoltaic effects and the highest light-electricity conversion efficiency among those PZT-based photodiodes previously reported. This work sheds light on the design and enhanced performance of new optoelectronic and solar energy devices.

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