Advanced Materials

Enhancement of Photocurrent in Ferroelectric Films Via the Incorporation of Narrow Bandgap Nanoparticles

Authors

  • Xiaoluan Yang,

    1. Jiangsu Key Laboratory of Thin Films, Department of Physics, Soochow University, 1 Shizi street, Suzhou, 215006, P.R. China
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  • Xiaodong Su,

    Corresponding author
    1. Jiangsu Key Laboratory of Thin Films, Department of Physics, Soochow University, 1 Shizi street, Suzhou, 215006, P.R. China
    • Jiangsu Key Laboratory of Thin Films, Department of Physics, Soochow University, 1 Shizi street, Suzhou, 215006, P.R. China
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  • Mingrong Shen,

    1. Jiangsu Key Laboratory of Thin Films, Department of Physics, Soochow University, 1 Shizi street, Suzhou, 215006, P.R. China
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  • Fengang Zheng,

    Corresponding author
    1. Jiangsu Key Laboratory of Thin Films, Department of Physics, Soochow University, 1 Shizi street, Suzhou, 215006, P.R. China
    • Jiangsu Key Laboratory of Thin Films, Department of Physics, Soochow University, 1 Shizi street, Suzhou, 215006, P.R. China
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  • Yu Xin,

    1. Jiangsu Key Laboratory of Thin Films, Department of Physics, Soochow University, 1 Shizi street, Suzhou, 215006, P.R. China
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  • Lu Zhang,

    1. Jiangsu Key Laboratory of Thin Films, Department of Physics, Soochow University, 1 Shizi street, Suzhou, 215006, P.R. China
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  • Muchuan Hua,

    1. Jiangsu Key Laboratory of Thin Films, Department of Physics, Soochow University, 1 Shizi street, Suzhou, 215006, P.R. China
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  • Yajie Chen,

    Corresponding author
    1. Department of Electrical and Computer Engineering and the Center for Microwave Magnetic Materials and Integrated Circuits, Northeastern University, Boston, MA 02115, USA
    • Department of Electrical and Computer Engineering and the Center for Microwave Magnetic Materials and Integrated Circuits, Northeastern University, Boston, MA 02115, USA.
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  • V. G. Harris

    1. Department of Electrical and Computer Engineering and the Center for Microwave Magnetic Materials and Integrated Circuits, Northeastern University, Boston, MA 02115, USA
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Abstract

A novel nanostructured ferroelectric photovoltaic material, consisting of the ferroelectric lead zirconate titanate (PZT) film and Ag2O semiconductor nanoparticles of comparatively narrow bandgap, has demonstrated a remarkable enhancement in the photovoltaic effects and the highest light-electricity conversion efficiency among those PZT-based photodiodes previously reported. This work sheds light on the design and enhanced performance of new optoelectronic and solar energy devices.

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