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Advanced Materials

Facile Method for rGO Field Effect Transistor: Selective Adsorption of rGO on SAM-Treated Gold Electrode by Electrostatic Attraction

Authors

  • Jieun Yang,

    1. Interdisciplinary School of Green Energy, Low Dimensional Carbon Materials Center and KIER-UNIST Advanced Center for Energy, Ulsan National Institute of Science & Technology (UNIST), UNIST-gil 50, Ulsan 689-805, Republic of Korea
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  • Jung-Woo Kim,

    1. Interdisciplinary School of Green Energy, Low Dimensional Carbon Materials Center and KIER-UNIST Advanced Center for Energy, Ulsan National Institute of Science & Technology (UNIST), UNIST-gil 50, Ulsan 689-805, Republic of Korea
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  • Hyeon Suk Shin

    Corresponding author
    1. Interdisciplinary School of Green Energy, Low Dimensional Carbon Materials Center and KIER-UNIST Advanced Center for Energy, Ulsan National Institute of Science & Technology (UNIST), UNIST-gil 50, Ulsan 689-805, Republic of Korea
    • Interdisciplinary School of Green Energy, Low Dimensional Carbon Materials Center and KIER-UNIST Advanced Center for Energy, Ulsan National Institute of Science & Technology (UNIST), UNIST-gil 50, Ulsan 689-805, Republic of Korea.
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Abstract

A facile method for the fabrication of negatively and positively charged rGO field effect transistors (FETs) is proposed, which utilizes electrostatic attraction between electrodes and rGO sheets. Negatively and positively charged rGO sheets are functionalized with carboxylic acid and amine groups, respectively. The FET of amine-functionalized rGO exhibits an n-doping effect. The FET devices fabricated by this method show high mobility of carriers.

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