Advanced Materials

Real-Time Observation on Dynamic Growth/Dissolution of Conductive Filaments in Oxide-Electrolyte-Based ReRAM

Authors

  • Qi Liu,

    1. Lab of Nanofabrication and Novel Device Integration, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China, Tel: 86-10-62007699, Fax: 86-10-82995583
    Current affiliation:
    1. These authors contributed equally to this work.
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  • Jun Sun,

    1. SEU-FEI Nano-Pico Center, Key Laboratory of MEMS of Ministry of Education, Southeast University, Nanjing 210096, China
    Current affiliation:
    1. These authors contributed equally to this work.
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  • Hangbing Lv,

    1. Lab of Nanofabrication and Novel Device Integration, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China, Tel: 86-10-62007699, Fax: 86-10-82995583
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  • Shibing Long,

    1. Lab of Nanofabrication and Novel Device Integration, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China, Tel: 86-10-62007699, Fax: 86-10-82995583
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  • Kuibo Yin,

    1. SEU-FEI Nano-Pico Center, Key Laboratory of MEMS of Ministry of Education, Southeast University, Nanjing 210096, China
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  • Neng Wan,

    1. SEU-FEI Nano-Pico Center, Key Laboratory of MEMS of Ministry of Education, Southeast University, Nanjing 210096, China
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  • Yingtao Li,

    1. Lab of Nanofabrication and Novel Device Integration, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China, Tel: 86-10-62007699, Fax: 86-10-82995583
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  • Litao Sun,

    1. SEU-FEI Nano-Pico Center, Key Laboratory of MEMS of Ministry of Education, Southeast University, Nanjing 210096, China
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  • Ming Liu

    Corresponding author
    1. Lab of Nanofabrication and Novel Device Integration, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China, Tel: 86-10-62007699, Fax: 86-10-82995583
    • Lab of Nanofabrication and Novel Device Integration, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China, Tel: 86-10-62007699, Fax: 86-10-82995583.
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Abstract

Evolution of growth/dissolution conductive filaments (CFs) in oxide-electrolyte-based resistive switching memories are studied by in situ transmission electron microscopy. Contrary to what is commonly believed, CFs are found to start growing from the anode (Ag or Cu) rather than having to reach the cathode (Pt) and grow backwards. A new mechanism based on local redox reactions inside the oxide-electrolyte is proposed.

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