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Manifestation of Carrier Relaxation Through the Manifold of Localized States in PCDTBT:PC60BM Bulk Heterojunction Material: The Role of PC84BM Traps on the Carrier Transport

  1. Wei Lin Leong,
  2. Gerardo Hernandez-Sosa,
  3. Sarah R. Cowan,
  4. Daniel Moses*,
  5. Alan J. Heeger

Article first published online: 26 MAR 2012

DOI: 10.1002/adma.201104192

Issue

Advanced Materials

Advanced Materials

Volume 24, Issue 17, pages 2273–2277, May 2, 2012

Additional Information

How to Cite

Leong, W. L., Hernandez-Sosa, G., Cowan, S. R., Moses, D. and Heeger, A. J. (2012), Manifestation of Carrier Relaxation Through the Manifold of Localized States in PCDTBT:PC60BM Bulk Heterojunction Material: The Role of PC84BM Traps on the Carrier Transport. Adv. Mater., 24: 2273–2277. doi: 10.1002/adma.201104192

Author Information

  1. Center for Polymers and Organic Solids, University of California, Santa Barbara, California, 93106, USA

*Center for Polymers and Organic Solids, University of California, Santa Barbara, California, 93106, USA.

Publication History

  1. Issue published online: 23 APR 2012
  2. Article first published online: 26 MAR 2012
  3. Manuscript Revised: 10 JAN 2012
  4. Manuscript Received: 1 NOV 2011

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Keywords:

  • charge transport;
  • trap-limited hopping;
  • bulk heterojunction;
  • organic solar cells
Thumbnail image of graphical abstract

The transport and relaxation of photogenerated carriers in a bulk heterojunction (BHJ) material made of a blend of PCDTBT and PC60BM are studied as a function of the concentration of PC84BM impurities. For low concentrations of PC84BM, the increasing activation energy with delay time indicates transport dominated by trap-limited carrier drift while the photocarriers relax through a manifold of disorder-induced localized states near the band edge. In the BHJ material with high concentration of PC84BM, transport is dominated by carrier hopping within the PC84BM impurity band.

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