The transport and relaxation of photogenerated carriers in a bulk heterojunction (BHJ) material made of a blend of PCDTBT and PC60BM are studied as a function of the concentration of PC84BM impurities. For low concentrations of PC84BM, the increasing activation energy with delay time indicates transport dominated by trap-limited carrier drift while the photocarriers relax through a manifold of disorder-induced localized states near the band edge. In the BHJ material with high concentration of PC84BM, transport is dominated by carrier hopping within the PC84BM impurity band.
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